요약정보 |
Disclosed are a memristor device, a method of fabricating the same, a synaptic device including a memristor device, and a neuromorphic device including a synaptic device. The disclosed memristor device may comprise a first electrode, a second electrode disposed to be spaced apart from the first electrode; and a resistance changing layer including a copolymer between the first electrode and the second electrode. The copolymer may be a copolymer of a first monomer and a second monomer, and the first polymer formed from the first monomer may have a property that diffusion of metal ions is faster than that of the second polymer formed from the second monomer. The second polymer may have a lower diffusivity of metal ions as compared with the first polymer. The first monomer may include vinylimidazole (VI). The second monomer may include 1,3,5-trivinyl-1,3,5-trimethylcyclotrisiloxane (V3D3). The copolymer may include p(V3D3-co-VI).
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타언어명 |
멤리스터 소자, 그 제조 방법, 멤리스터 소자를 포함하는 시냅틱 소자 및 시냅틱 소자를 포함하는 뉴로모픽 소자
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출원번호 |
18460713
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출원일자 |
2023-09-05
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등록번호 |
12314841
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등록일자 |
2025-05-27
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발명자 |
Choi, Sung-Yool, Im, Sung Gap, Yang, Sang Yoon, Oh, Jungyeop, Park, Sangsu
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출원/등록국가 |
미국
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기관 |
KAIST
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