STAR LIBRARY

연구자

1-5 out of 5 results

로드니 루오프 화학과 1983 1, 3, 1, 3, 4, 3, 5, 6, 4, 17, 12, 8, 5, 4, 2, 7, 7, 5, 7, 13, 11, 9, 15, 17, 17, 20, 28, 39, 50, 40, 26, 22, 19, 20, 20, 16, 22, 13, 19, 9, 9, 4, 2, 2026
U
박기복 물리학과 2003 1, 3, 3, 1, 1, 1, 2, 6, 3, 4, 5, 3, 7, 4, 4, 2, 2, 2, 3, 2, 2024
U
윤훈한 반도체공학과 2015 1, 1, 1, 3, 2, 5, 3, 4, 8, 1, 2026
G
조병진 전기및전자공학부 1988 2, 1, 3, 1, 1, 2, 3, 1, 4, 15, 2, 11, 14, 22, 7, 7, 11, 11, 5, 11, 9, 13, 10, 15, 12, 15, 19, 14, 15, 10, 13, 7, 5, 11, 10, 2, 2026
K
최성율 전기및전자공학부 1995 1, 1, 3, 2, 6, 5, 3, 6, 2, 14, 7, 11, 4, 8, 6, 16, 9, 13, 11, 13, 12, 9, 14, 11, 12, 2, 2026
K

연구실

1-1 out of 1 results

집적유기전자소자 연구실 OLED 디스플레이, 유기 및 페로브스카이트 태양전지, 플렉서블 전자기술, 유기전자소자, 유기발광다이오드, 유기 태양전지, 페로브스카이트 태양전지, 유연 전자소자 유승협 (전기및전자공학부)
K

저널논문

1-3 out of 9 results

Reduction of water-molecule-induced current-voltage hysteresis in graphene field effect transistor with semi-dry transfer using flexible supporter JOURNAL OF APPLIED PHYSICS, v.125, no.18, 2019-05
SCOPUS 14

Keywords Chemical vapor deposition Electric fields Field effect transistors Graphene transistors Hysteresis Molecules Polymethyl methacrylates Substrates Chemical vapor depositions (CVD) Coulomb potential Current voltage curve Field-effect mobilities Graphene field-effect transistors Graphene fieldeffect transistors (GFET) Hysteretic behavior IV characteristics Graphene

Reduction of water-molecule-induced current-voltage hysteresis in graphene field effect transistor with semi-dry transfer using flexible supporter
Jung, Sungchul ; Yoon, Hoon Hahn ; Jin, Hanbyul ; Mo, Kyuhyung ; Choi, Gahyun ; Lee, Junghyun ; Park, Hyesung ; Park, Kibog

초록	The polymethyl methacrylate-assisted wet transfer method of chemical vapor deposition (CVD) graphene has been widely used, thanks to its good coverage and simplicity. However, in the wet-transfer method, water molecules are inevitably trapped between the graphene and the substrate because the graphene is transferred to the substrate while floating in water. The trapped water molecules can cause the unwanted doping of graphene and hysteretic behavior in the current-voltage (I-V) curve. We here propose a new semidry transfer method using the Kapton tape as an additional flexible supporting layer. The N 2 blowing and heating processes are added to vaporize the water molecules adsorbed on graphene layer right before the transfer step. By comparing the I-V characteristics of wet- and semidry-transferred graphene field effect transistor (GFET), the field effect mobility is found to be larger for the semidry-transferred GFET in comparison with the wet-transferred one, possibly due to the more uniform Coulomb potential landscape. Most importantly, the hysteretic behavior is found to be reduced in accordance with the decrease of the trapped water molecules. The averaged electron mobilities obtained from the GFET measurements are 1118 c m 2 / V s and 415 c m 2 / V s for semidry- and wet-transferred graphene, respectively. Our semidry transfer method can provide a simple and reliable way to transfer the CVD graphene onto an arbitrary substrate with the minimized number of trapped water molecules, which is readily applicable for large-scale substrates with potential of commercialization.
서지사항	JOURNAL OF APPLIED PHYSICS, v.125, no.18, 2019-05
ISSN	0021-8979
주제분야	Physics
저자 키워드	Chemical vapor deposition Electric fields Field effect transistors Graphene transistors Hysteresis Molecules Polymethyl methacrylates Substrates Chemical vapor depositions (CVD) Coulomb potential Current voltage curve Field-effect mobilities Graphene field-effect transistors Graphene fieldeffect transistors (GFET) Hysteretic behavior IV characteristics Graphene
DOI	10.1063/1.5089494
자료유형	Article
기관	UNIST

Highly Enantioselective Graphene-Based Chemical Sensors Prepared by Chiral Noncovalent Functionalization ACS APPLIED MATERIALS & INTERFACES, v.10, no.42, pp.36194 - 36201, 2018-10
SCOPUS 38

Keywords graphene transistors chiral sensors chemical sensors noncovalent interactions enantioselectivity

Highly Enantioselective Graphene-Based Chemical Sensors Prepared by Chiral Noncovalent Functionalization
Shang, Xiaobo ; Park, Cheol Hee ; Jung, Gwan Yeong ; Kwak, Sang Kyu ; Oh, Joon Hak

초록	As a basic characteristic of the natural environment and living matter, chirality has been used in various scientific and technological fields. Chiral discrimination is of particular interest owing to its importance in catalysis, organic synthesis, biomedicine, and pharmaceutics. However, it is still very challenging to effectively and selectively sense and separate different enantiomers. Here, enantio-differentiating chemosensor systems have been developed through spontaneous chiral functionalization of the surface of graphene field-effect transistors (GFETs). GFET sensors functionalized using noncovalent interactions between graphene and a newly synthesized chiral-functionalized pyrene material, Boc-L-Phe-Pyrene, exhibit highly enantioselective detection of natural acryclic monoterpenoid enantiomers, that is, (R)-(+)- and (S)-(-)-beta-citronellol. On the basis of a computational study, the origin of enantio-differentiation is assigned to the discriminable charge transfer from (R)-(+)- or (S)-(-)-beta-citronellol into graphene with a significant difference in binding strength depending on surface morphology. The chemosensor system developed herein has great potential to be applied in miniaturized and rapid enantioselective sensing with high sensitivity and selectivity.
서지사항	ACS APPLIED MATERIALS & INTERFACES, v.10, no.42, pp.36194 - 36201, 2018-10
ISSN	1944-8244
주제분야	Science & Technology - Other Topics Materials Science
저자 키워드	graphene transistors chiral sensors chemical sensors noncovalent interactions enantioselectivity
DOI	10.1021/acsami.8b13517
자료유형
기관	UNIST

Integrated arrays of air-dielectric graphene transistors as transparent active-matrix pressure sensors for wide pressure ranges NATURE COMMUNICATIONS, v.8, 2017-03
SCOPUS 198

Integrated arrays of air-dielectric graphene transistors as transparent active-matrix pressure sensors for wide pressure ranges
Shin, Sung-Ho ; Ji, Sangyoon ; Choi, Seiho ; Pyo, Kyoung-Hee ; An, Byeong Wan ; Park, Jihun ; Kim, Joohee ; Kim, Ju-Young ; Lee, Ki-Suk ; Kwon, Soon-Yong ; Heo, Jaeyeong ; Park, Byong-Guk ; Park, Jang-Ung

초록	Integrated electronic circuitries with pressure sensors have been extensively researched as a key component for emerging electronics applications such as electronic skins and healthmonitoring devices. Although existing pressure sensors display high sensitivities, they can only be used for specific purposes due to the narrow range of detectable pressure (under tens of kPa) and the difficulty of forming highly integrated arrays. However, it is essential to develop tactile pressure sensors with a wide pressure range in order to use them for diverse application areas including medical diagnosis, robotics or automotive electronics. Here we report an unconventional approach for fabricating fully integrated active-matrix arrays of pressure-sensitive graphene transistors with air-dielectric layers simply formed by folding two opposing panels. Furthermore, this realizes a wide tactile pressure sensing range from 250 Pa to similar to 3MPa. Additionally, fabrication of pressure sensor arrays and transparent pressure sensors are demonstrated, suggesting their substantial promise as next-generation electronics.
서지사항	NATURE COMMUNICATIONS, v.8, 2017-03
ISSN	2041-1723
주제분야	Science & Technology - Other Topics
저자 키워드
DOI	10.1038/ncomms14950
자료유형	Article
기관	KAIST, UNIST

연구과제

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특허

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학술활동

1-3 out of 7 results

Dirac Voltage Shift of Graphene Transistors According to the Composition of Copolymer Dielectrics Deposited Via Initiated Chemical Vapor Deposition IMID 2017, 대한민국, 2017-08-28 ~ 2017-08-31

Dirac Voltage Shift of Graphene Transistors According to the Composition of Copolymer Dielectrics Deposited Via Initiated Chemical Vapor Deposition
Pak, Kwanyong ; Oh, Joong Gun ; Kim, Choong Sun ; Cho, Byung-Jin ; Im, Sung Gap

초록
학술대회명	IMID 2017
개최국	대한민국
개최장소	BEXCO, Busan
개최일	2017-08-31
저자 키워드
DOI
기관	KAIST

Integrated Arrays of Air-Dielectric Graphene Transistors as Transparent, Active-Matrix Pressure Sensors for Wide Pressure Ranges The 2017 E-MRS Spring Meeting, 프랑스, 2017-05-22 ~ 2017-05-26

Integrated Active-Matrix Pressure Sensors Using Air-Dielectric Graphene Transistors with Wide Pressure Ranges The 4th International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE 2016), 대한민국, 2016-11-06 ~ 2016-11-09

연구장비

검색결과가 없습니다.

연구자 및 연구성과 통합검색 KAIST-GIST-DGIST-UNIST 연구자, 연구실, 연구성과를 통합검색하실 수 있습니다.

연구자

연구실

저널논문

Reduction of water-molecule-induced current-voltage hysteresis in graphene field effect transistor with semi-dry transfer using flexible supporter
Jung, Sungchul ; Yoon, Hoon Hahn ; Jin, Hanbyul ; Mo, Kyuhyung ; Choi, Gahyun ; Lee, Junghyun ; Park, Hyesung ; Park, Kibog

Highly Enantioselective Graphene-Based Chemical Sensors Prepared by Chiral Noncovalent Functionalization
Shang, Xiaobo ; Park, Cheol Hee ; Jung, Gwan Yeong ; Kwak, Sang Kyu ; Oh, Joon Hak

연구과제

특허

학술활동

Dirac Voltage Shift of Graphene Transistors According to the Composition of Copolymer Dielectrics Deposited Via Initiated Chemical Vapor Deposition
Pak, Kwanyong ; Oh, Joong Gun ; Kim, Choong Sun ; Cho, Byung-Jin ; Im, Sung Gap

Integrated Arrays of Air-Dielectric Graphene Transistors as Transparent, Active-Matrix Pressure Sensors for Wide Pressure Ranges
Ji, Sangyoon ; Kim Joohee ; Jang Jiuk ; Park, Jang-Ung

Integrated Active-Matrix Pressure Sensors Using Air-Dielectric Graphene Transistors with Wide Pressure Ranges
Shin, Sungho ; Ji, Sangyoon ; An, Byeong Wan ; Park, Jang-Ung

연구장비

초록
학술대회명	The 2017 E-MRS Spring Meeting
개최국	프랑스
개최장소
개최일	2017-05-22
저자 키워드
DOI
기관	UNIST

초록
학술대회명	The 4th International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE 2016)
개최국	대한민국
개최장소
개최일	2016-11-08
저자 키워드
DOI
기관	UNIST

연구자 및 연구성과 통합검색 KAIST-GIST-DGIST-UNIST 연구자, 연구실, 연구성과를 통합검색하실 수 있습니다.

연구자

연구실

저널논문

Reduction of water-molecule-induced current-voltage hysteresis in graphene field effect transistor with semi-dry transfer using flexible supporter Jung, Sungchul ; Yoon, Hoon Hahn ; Jin, Hanbyul ; Mo, Kyuhyung ; Choi, Gahyun ; Lee, Junghyun ; Park, Hyesung ; Park, Kibog

Highly Enantioselective Graphene-Based Chemical Sensors Prepared by Chiral Noncovalent Functionalization Shang, Xiaobo ; Park, Cheol Hee ; Jung, Gwan Yeong ; Kwak, Sang Kyu ; Oh, Joon Hak

연구과제

특허

학술활동

Dirac Voltage Shift of Graphene Transistors According to the Composition of Copolymer Dielectrics Deposited Via Initiated Chemical Vapor Deposition Pak, Kwanyong ; Oh, Joong Gun ; Kim, Choong Sun ; Cho, Byung-Jin ; Im, Sung Gap

Integrated Arrays of Air-Dielectric Graphene Transistors as Transparent, Active-Matrix Pressure Sensors for Wide Pressure Ranges Ji, Sangyoon ; Kim Joohee ; Jang Jiuk ; Park, Jang-Ung

Integrated Active-Matrix Pressure Sensors Using Air-Dielectric Graphene Transistors with Wide Pressure Ranges Shin, Sungho ; Ji, Sangyoon ; An, Byeong Wan ; Park, Jang-Ung

연구장비

Reduction of water-molecule-induced current-voltage hysteresis in graphene field effect transistor with semi-dry transfer using flexible supporter
Jung, Sungchul ; Yoon, Hoon Hahn ; Jin, Hanbyul ; Mo, Kyuhyung ; Choi, Gahyun ; Lee, Junghyun ; Park, Hyesung ; Park, Kibog

Highly Enantioselective Graphene-Based Chemical Sensors Prepared by Chiral Noncovalent Functionalization
Shang, Xiaobo ; Park, Cheol Hee ; Jung, Gwan Yeong ; Kwak, Sang Kyu ; Oh, Joon Hak

Dirac Voltage Shift of Graphene Transistors According to the Composition of Copolymer Dielectrics Deposited Via Initiated Chemical Vapor Deposition
Pak, Kwanyong ; Oh, Joong Gun ; Kim, Choong Sun ; Cho, Byung-Jin ; Im, Sung Gap

Integrated Arrays of Air-Dielectric Graphene Transistors as Transparent, Active-Matrix Pressure Sensors for Wide Pressure Ranges
Ji, Sangyoon ; Kim Joohee ; Jang Jiuk ; Park, Jang-Ung

Integrated Active-Matrix Pressure Sensors Using Air-Dielectric Graphene Transistors with Wide Pressure Ranges
Shin, Sungho ; Ji, Sangyoon ; An, Byeong Wan ; Park, Jang-Ung