STAR LIBRARY

연구자

1-9 out of 14 results

강기범 신소재공학과 2007 2, 3, 2, 2, 1, 3, 1, 2, 1, 3, 2, 1, 5, 5, 7, 7, 3, 15, 6, 2025
K
김갑진 물리학과 2008 3, 7, 1, 4, 4, 3, 6, 8, 8, 11, 7, 8, 8, 11, 6, 10, 9, 3, 2025
K
김민곤 화학과 1996 1, 2, 2, 1, 5, 3, 6, 5, 1, 5, 7, 9, 8, 17, 9, 8, 8, 13, 11, 16, 9, 6, 3, 3, 4, 2025
G
남동욱 기계공학과 2011 1, 3, 2, 3, 4, 6, 1, 2, 2, 2, 11, 7, 9, 5, 2, 2025
K
신흥주 기계공학과 1998 1, 2, 1, 4, 1, 2, 1, 3, 1, 5, 4, 3, 6, 4, 3, 2, 3, 1, 2025
U
양희준 물리학과 2006 1, 1, 1, 6, 5, 4, 3, 3, 1, 6, 4, 10, 10, 17, 13, 8, 15, 4, 2025
K
윤준보 전기및전자공학부 1998 3, 3, 1, 7, 1, 2, 3, 3, 3, 7, 5, 10, 11, 10, 7, 5, 8, 3, 6, 7, 6, 5, 3, 3, 5, 7, 4, 2025
K
이건재 신소재공학과 2004 1, 5, 5, 1, 1, 3, 1, 5, 6, 11, 8, 13, 13, 9, 12, 7, 12, 6, 8, 5, 3, 2025
K
이정용 전기및전자공학부 2003 1, 1, 5, 2, 1, 10, 12, 12, 12, 9, 9, 5, 10, 5, 7, 10, 11, 7, 2025
K

연구실

1-4 out of 4 results

저널논문

1-3 out of 62 results

Wafer-scale AA-stacked hexagonal boron nitride grown on a GaN substrate NATURE MATERIALS, 2025-03
SCOPUS 1

Wafer-scale AA-stacked hexagonal boron nitride grown on a GaN substrate
Moon, Seokho ; Okello, Odongo Francis Ngome ; Rousseau, Adrien ; Choi, Chang-Won ; Kim, Youngjae ; Park, Yunjae ; Kim, Jiye ; Kim, Jaewon ; Kim, Minhyuk ; Valvin, Pierre ; Cho, Jaehee ; Watanabe, Kenji ; Taniguchi, Takashi ; Jeong, Hu Young ; Fugallo, Giorgia ; Desrat, Wilfried ; Ding, Feng ; Lee, Jaedong ; Gil, Bernard ; Cassabois, Guillaume ; Choi, Si-Young ; Kim, Jong Kyu

초록	The stacking sequence of two-dimensional hexagonal boron nitride (hBN) is a critical factor that determines its polytypes and its distinct physical properties. Although most hBN layers adopt the thermodynamically stable AA ' stacking sequence, achieving alternative stacking configurations has remained a long-standing challenge. Here we demonstrate the scalable synthesis of hBN featuring unprecedented AA stacking, where atomic monolayers align along the c axis without any translation or rotation. This previously considered thermodynamically unfavourable hBN polytype is achieved through epitaxial growth on a two-inch single-crystalline gallium nitride wafer, using a metal-organic chemical vapour deposition technique. Comprehensive structural and optical characterizations, complemented by theoretical modelling, evidence the formation of AA-stacked multilayer hBN and reveal that hBN nucleation on the vicinal gallium nitride surface drives the unidirectional alignment of layers. Here electron doping plays a central role in stabilizing the AA stacking configuration. Our findings provide further insights into the scalable synthesis of engineered hBN polytypes, characterized by unique properties such as large optical nonlinearity.
서지사항	NATURE MATERIALS, 2025-03
ISSN	1476-1122
주제분야	Chemistry Materials Science Physics
저자 키워드
DOI	10.1038/s41563-025-02173-2
자료유형	Article; Early Access
기관	DGIST, UNIST

Wafer-Scale Growth of Ultrauniform 2D PtSe2 Films with Spatial and Thickness Control through Multi-step Metal Conversion ACS NANO, v.18, no.50, pp.33977 - 33987, 2024-12
SCOPUS 1

Keywords PtSe2 p-type semiconductor semimetal wafer-scale thickness-controlled high uniformity metal conversion

Wafer-Scale Growth of Ultrauniform 2D PtSe2 Films with Spatial and Thickness Control through Multi-step Metal Conversion
Gyeon, Minseung ; Seo, Jae Eun ; Oh, Saeyoung ; Noh, Gichang ; Lee, Changwook ; Choi, Minhyuk ; Kwon, Seongdae ; Kim, Tae Soo ; Jeong, Hu Young ; Song, Seungwoo ; Chang, Jiwon ; Kang, Kibum

초록	Metal conversion processes have been instrumental in advancing semiconductor technology by facilitating the growth of thin-film semiconductors, including metal oxides and sulfides. These processes, widely used in the industry, enhance the semiconductor manufacturing efficiency and scalability, offering convenience, large-area fabrication suitability, and high throughput. Furthermore, their application to emerging two-dimensional (2D) semiconductors shows promise in addressing spatial control and layer number control challenges. In this work, we designed a multi-step metal conversion process for 2D materials to synthesize a high-quality and ultrauniform film. PtSe2 is introduced to utilize its wide-band-gap tunability, which exhibits both semiconductor and metallic properties. Our multi-step-grown PtSe2 film shows extremely low roughness (R-a = 0.107 nm) and improved interlayer quality compared to the single-step PtSe2 film. Additionally, we explored the growth mechanism of the metal conversion process and how the multi-step method contributes to the thickness uniformity of the film. We demonstrated a thin PtSe2 channel field-effect transistor (FET) array with p-type behavior with a maximum on/off ratio similar to 10(3). The FET fabricated by the MoS2 channel with the semimetallic multi-step PtSe2 electrode shows an enhanced performance in mobility and contact resistance compared to the conventional single-step PtSe2 electrode FET.
서지사항	ACS NANO, v.18, no.50, pp.33977 - 33987, 2024-12
ISSN	1936-0851
주제분야	Chemistry Science & Technology - Other Topics Materials Science
저자 키워드	PtSe2 p-type semiconductor semimetal wafer-scale thickness-controlled high uniformity metal conversion
DOI	10.1021/acsnano.4c08160
자료유형	Article
기관	KAIST, UNIST

Wafer-scale growth of 2D SnSx hybrid films on germanium by atomic layer deposition for broadband photodetection APPLIED SURFACE SCIENCE, v.675, 2024-11

Keywords Atomic layer deposition Broadband photodiode SnS Wafer-scale Germanium SnS2

Wafer-scale growth of 2D SnSx hybrid films on germanium by atomic layer deposition for broadband photodetection
Choi, Yeonsik ; Son, Bongkwon ; Chen, Qimiao ; Lu, Kunze ; Nam, Donguk ; Lee, Sang Yeon ; Tan, Chuan Seng ; Lee, Jung-Yong ; Jeon, Hyeongtag

초록	Two-dimensional transition metal chalcogenides (2D-TMCs) are promising materials with unique optical and electrical properties compared to bulk materials. Although the exfoliated/CVD-growth 2D-TMCs have superior properties, they have a limitation for wafer-scale processes and applications in integrated circuits (ICs). Herein, we report the fabrication of wafer-scale 2D hybridized tin chalcogenide (SnSx) on a germanium (Ge) substrate using an atomic layer deposition process, followed by a thermal annealing process to form 2D-SnSx. 2D-SnSx consists of a hybrid structure of parallel 2D-SnS2 and tilted SnS on a Ge (100) substrate, enabling bandgap lowering and intrinsically p-type doping. As a result, our broadband photodiode with a p-SnSx/n-Ge heterostructure showed a specific responsivity of 0.41 and 0.24 A/W at wavelengths 532 and 1550 nm, respectively. This work demonstrates the potential for wafer-scale 2D-TMC-based facile ICs on the Ge substrate.
서지사항	APPLIED SURFACE SCIENCE, v.675, 2024-11
ISSN	0169-4332
주제분야	Chemistry Materials Science Physics
저자 키워드	Atomic layer deposition Broadband photodiode SnS Wafer-scale Germanium SnS2
DOI	10.1016/j.apsusc.2024.160957
자료유형	Article
기관	KAIST

연구과제

1-1 out of 1 results

기상과 액상의 혼합 합성법을 이용한 이종 구조의 2차원 전이금속 화합물의 합성(2018) 교육부, 이공분야기초연구사업, 김동흔, 2018-06 ~ 2019-02
Keywords 2D Transition Metal Dichalcogenides hetrostructure wafer scale Flexible device

정부부처	교육부
연구비지원기관	한국연구재단
지원사업명	이공분야기초연구사업
연구 책임자	김동흔
연구기간	2018-06 ~ 2019-02
키워드(영문)	2D Transition Metal Dichalcogenides hetrostructure wafer scale Flexible device
키워드(한글)	2차원 전이금속 화합물 이종구조 대면적 합성법 유연소자
기관	KAIST

특허

1-1 out of 1 results

측벽 스페이서 기술 방법을 이용한 대면적 금속 나노 고리 구조 제조 방법 및 이를 이용한 전사 방법 Methods of metal nano ring formation in large wafer-scale using sidewall spacer technique and method of transferring the metal nano ring formation using the same, Registration Number: 10-1627430-0000, Registration Date: 2016-05-30, 대한민국

측벽 스페이서 기술 방법을 이용한 대면적 금속 나노 고리 구조 제조 방법 및 이를 이용한 전사 방법

요약정보	금속 나노 고리 제조방법으로, 기판에 구멍 구조를 패터닝하는 단계; 상기 패터닝된 구멍 구조의 측벽에 스페이서를 형성하는 단계; 및 상기 기판에 금속을 증착하여 금속 고리 구조를 형성하는 단계를 포함하는 것을 특징으로 하는 금속 나노 고리 제조방법이 제공된다. 본 발명에 따르면, 수십 나노미터 급의 두께를 가지는 금속 나노 고리 구조를 쉽게 대면적으로 제작할 수 있다. 따라서, 기존의 금속 나노 디스크 구조에 비하여 다양한 크기 조절 변수로 인해 조율을 통해 적외선 영역에서 플라즈몬 효과를 조절 가능하게 할 수 있으며, 또한 기존의 반도체 공정 기반의 측벽 스페이서 공정을 통해 별도의 나노 급 패터닝 공정 없이 웨이퍼 스케일의 대면적으로 금속 나노 고리 구조 제작이 가능하다.	크게보기
타언어명	Methods of metal nano ring formation in large wafer-scale using sidewall spacer technique and method of transferring the metal nano ring formation using the same
출원번호	10-2014-0173315
출원일자	2014-12-04
등록번호	10-1627430-0000
등록일자	2016-05-30
발명자	유승협, 정현호
출원/등록국가	대한민국
기관	KAIST

학술활동

1-3 out of 29 results

A Wafer-Scale Hybrid Dielectric Made from Single-Crystal Bilayer Hexagonal Boron Nitride for Two-Dimensional Electronic Devices 2024 MRS Fall Meeting, 미국, 2024-12-01 ~ 2024-12-06

A Wafer-Scale Hybrid Dielectric Made from Single-Crystal Bilayer Hexagonal Boron Nitride for Two-Dimensional Electronic Devices
Wang, Jaewon ; Lee, Hyeonwoo ; Kim, Jaemin ; Yeo, Haeng Un ; Yoon, Cheol Hwan ; Yoo, Min Seok ; Park, Kitae ; Suh, Joonki ; Hwang, Chanyong ; Yoon, Tae Sik ; Seol, Minsu ; Shin, Hyung-Joon ; Lee, Zonghoon ; Jeong, Changwook ; Kwon, Soon-Yong

초록
학술대회명	2024 MRS Fall Meeting
개최국	미국
개최장소
개최일	2024-12-03
저자 키워드
DOI
기관	UNIST

Wafer-scale Direct Growth of Nanocrystalline Boron Nitride for Memristor-based Physical Reservoirs MEMRYSIS 2024, 대한민국, 2024-11-10 ~ 2024-11-13

Wafer-scale Direct Growth of Nanocrystalline Boron Nitride for Memristor-based Physical Reservoirs
Ahn, Wonbae ; Lee, Sejin ; Oh, Jungyeop ; Lee, Hyeonji ; Choi, Sung-Yool

초록
학술대회명	MEMRYSIS 2024
개최국	대한민국
개최장소
개최일	2024-11-12
저자 키워드
DOI
기관	KAIST

Vacuum-deposited stretchable, ultrathin polymer dielectric for wafer-scale soft electronics ACS Fall 2023: Harnessing the Power of Data, 미국, 2023-08-12 ~ 2023-08-17

Vacuum-deposited stretchable, ultrathin polymer dielectric for wafer-scale soft electronics
Kang, Juyeon ; Gu, Jahun ; Lee, Seongjun ; Im, Sung Gap ; Son, Donghui ; Kim, Daehyeong

초록
학술대회명	ACS Fall 2023: Harnessing the Power of Data
개최국	미국
개최장소	San Francisco, CA
개최일	2023-08-15
저자 키워드
DOI
기관	KAIST

연구장비

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연구자 및 연구성과 통합검색 KAIST-GIST-DGIST-UNIST 연구자, 연구실, 연구성과를 통합검색하실 수 있습니다.

연구자

연구실

저널논문

Wafer-scale growth of 2D SnSx hybrid films on germanium by atomic layer deposition for broadband photodetection Choi, Yeonsik ; Son, Bongkwon ; Chen, Qimiao ; Lu, Kunze ; Nam, Donguk ; Lee, Sang Yeon ; Tan, Chuan Seng ; Lee, Jung-Yong ; Jeon, Hyeongtag

연구과제

기상과 액상의 혼합 합성법을 이용한 이종 구조의 2차원 전이금속 화합물의 합성(2018)

특허

측벽 스페이서 기술 방법을 이용한 대면적 금속 나노 고리 구조 제조 방법 및 이를 이용한 전사 방법

학술활동

Wafer-scale Direct Growth of Nanocrystalline Boron Nitride for Memristor-based Physical Reservoirs Ahn, Wonbae ; Lee, Sejin ; Oh, Jungyeop ; Lee, Hyeonji ; Choi, Sung-Yool

Vacuum-deposited stretchable, ultrathin polymer dielectric for wafer-scale soft electronics Kang, Juyeon ; Gu, Jahun ; Lee, Seongjun ; Im, Sung Gap ; Son, Donghui ; Kim, Daehyeong

연구장비

Wafer-scale growth of 2D SnSx hybrid films on germanium by atomic layer deposition for broadband photodetection
Choi, Yeonsik ; Son, Bongkwon ; Chen, Qimiao ; Lu, Kunze ; Nam, Donguk ; Lee, Sang Yeon ; Tan, Chuan Seng ; Lee, Jung-Yong ; Jeon, Hyeongtag

Wafer-scale Direct Growth of Nanocrystalline Boron Nitride for Memristor-based Physical Reservoirs
Ahn, Wonbae ; Lee, Sejin ; Oh, Jungyeop ; Lee, Hyeonji ; Choi, Sung-Yool

Vacuum-deposited stretchable, ultrathin polymer dielectric for wafer-scale soft electronics
Kang, Juyeon ; Gu, Jahun ; Lee, Seongjun ; Im, Sung Gap ; Son, Donghui ; Kim, Daehyeong